- jiangsu changjiang ele ctronics technology co., ltd to -220-3l plastic-encapsulate transistors KTD2058 transist or ( npn ) fea tures low collector saturation voltage : vce(sat) = 1. 0v(max) maximum ratings (t a =25 unless otherw ise noted) symbol paramete r value unit v cbo collector-bas e voltage 60 v v ceo collector-emitter v oltage 60 v v ebo emitter-base vo ltage 7 v i c collector curr ent -continuous 3 a p c collector po wer dissipation 2 w t j junction t emperature 150 t stg st orage temperature range -55-150 electrical chara cteristics(ta=25 unless otherwise specified) parameter symbol test conditions m in typ max unit collecto r-base breakdown voltage v (br)cb o i c =100a, i e =0 60 v collecto r-emitter breakdown voltage v (br)ce o i c =50ma, i b =0 60 v emitter-ba se breakdown voltage v (br )ebo i e =100a, i c =0 7 v collecto r cut-off current i cbo v cb =60v , i e =0 100 a emitter cut-off current i ebo v eb =7v , i c =0 100 a dc curr ent gain h fe v ce =5v , i c =0 .5a 60 200 collecto r-emitter saturation voltage v ce(sa t) i c =2a, i b =0.2a 1 v base-emitter vo ltage v be(on) v ce =5v , i c =0.5a 1 v tr ansition frequency f t v ce =5v , i c =0.5 a 3 mhz collecto r output capacitance c ob v cb =10v , i e =0 , f=1mhz 35 pf tu rn-on time t on 0.65 st orage time t stg 1.3 swi tching time fall time t f 0.65 us cla ssification of h fe rank o y range 60-120 100-200 to -220 3l 1. ba se 2. collectotr 3. emitter www.cj-elec.com 1 c,may,2016 1 3 2
0.1 1 10 1 10 100 1000 10000 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 10 100 1000 0 25 50 75 100 125 150 0 500 1000 1500 2000 2500 3000 10 100 1000 0 200 400 600 800 1000 1200 10 100 1000 0 25 50 75 100 125 150 175 200 225 250 275 300 10 100 1000 10 100 1000 01 2345678910 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 capacitance c ( p f) reverse volt ag e v (v) c ob c ib f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib ?? 30 t a = 1 0 0 t a = 2 5 collcetor current i c (ma) base- em m iter voltage v be (m v) i c v be comm o n emitter v ce =5v collect o r power dissipation p c (mw) am bient temperature t a ( ) p c ?? t a ?? base-emit t er saturation voltage v besa t (mv) collector current i c (ma) =10 t a =100 t a =25 i c v b esat ?? collector-emitter saturation vo ltage v ce sat (mv) collector current i c (ma) i c v c esat ?? t a =100 t a =25 =10 3000 3000 3000 3000 dc current gain h fe collector current i c (m a) com mon emitter v ce =5v t a =25 t a =100 i c h fe ? ? 10m a 9m a 8m a 7m a 6m a 5 ma 4m a 3m a 2m a i b =1ma collector current i c (a) collector-em itter voltage v ce (v) c ommon emitter t a =25 s tatic characteristic www.cj-elec.com 2 c,may,2016 t ypical characteristics
www.cj-elec.com 3 c,may,2016 to-220-3l package outline dimensions m in max min max a 4.470 4.670 0.176 0.184 a1 2.520 2.820 0.099 0.111 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.170 1.370 0.046 0.054 d 10.010 10.310 0.394 0.406 e 8.500 8.900 0.335 0.350 e1 12.060 12.460 0.475 0.491 e e1 4.980 5.180 0.196 0.204 f 2.590 2.890 0.102 0.114 h 0.000 0.300 0.000 0.012 l 13.400 13.800 0.528 0.543 l1 3.560 3.960 0.140 0.156 3.735 3.935 0.147 0.155 symbol dimensions in millimeters dimensions in inches 0.100 typ 2.540 typ
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